CPH6526 no.7453-1/5 features ? composite type with 2 transistors contained in the cph package currently in use, improving the mount- ing efficiency greatly. ? the CPH6526 is formed with two chips, being equivalent to the 2sa1622 / 2sc4211, placed in one package. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 5ordering number : enn7453 CPH6526 package dimensions unit : mm 2187 [CPH6526] pnp/npn epitaxial planar silicon composite transistors low-frequency general-purpose amplifier applications specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)55 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)150 ma collector current (pulse) i cp (--)300 ma base current i b (--)30 ma collector dissipation p c 1unit 350 mw total dissipation p t 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)35v, i e =0 (--)0.1 m a emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 m a dc current gain h fe v ce =(--)6v, i c =(--)1ma 160 600 marking : 3r continued on next page. any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 22004 ts im ta-100414 1 : emitter1 2 : base1 3 : collector2 4 : emitter2 5 : base2 6 : collector1 sanyo : cph6 0.05 0.9 0.7 0.2 1.6 0.6 0.6 0.95 1 23 6 5 4 2.8 0.2 2.9 0.15 0.4
CPH6526 no.7453-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit gain-bandwidth product f t v ce =(--)6v, i c =(--)10ma (180)200 mhz output capacitance cob v cb =(--)6v, f=1mhz (2.9)1.7 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)50ma, i b =(--)5ma (--0.11)0.08 (--)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)50ma, i b =(--)5ma (--)0.8 (--)1.0 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--)55 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)6 v turn on time t on see specified test circuit. 0.15 m s storage time t stg see specified test circuit. (0.60)0.75 m s fall time t f see specified test circuit. 0.20 m s note : the specifications shown above are for each individual transistor. switching time test circuit electrical connection it04699 it04700 12 10 8 6 4 2 0 i c -- v ce 0 1020304050 --10 --20 --30 --40 --50 --14 0 i c -- v ce 0 i b =0 --12 --10 -- 8 -- 6 -- 4 -- 2 it04701 it04702 [tr2] i b =0 [tr1] -- 5 m a --10 m a --15 m a --20 m a --25 m a --30 m a --35 m a --40 m a --45 m a --50 m a 5 m a 10 m a 15 m a 20 m a 25 m a 30 m a 35 m a 40 m a 45 m a 50 m a collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma 50 20 40 30 10 0 i c -- v ce 0 0.2 0.4 0.6 0.8 1.0 i c -- v ce i b =0 [tr2] i b =0 [tr1] 50 m a 100 m a 150 m a 200 m a 250 m a 300 m a 350 m a --50 --20 --40 --30 --10 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --50 m a --100 m a --150 m a --200 m a --250 m a --300 m a 500 m a --500 m a --450 m a --400 m a --350 m a 450 m a 400 m a v r r b v cc =20v v be = --5v + + 50 input output r l =2k 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =10ma for pnp, the polarity is reversed. 123 654 tr1 tr2 tr1=pnp tr2=npn (top view)
CPH6526 no.7453-3/5 h fe -- i c v ce =6v h fe -- i c 1000 3 2 3 --0.1 --100 --10 23 5 --1.0 23 5 23 5 23 100 7 5 7 5 1000 3 2 3 0.1 100 10 23 5 23 5 23 5 1.0 2 100 7 5 7 5 v ce = --6v --25 c 25 c ta=75 c f t -- i c v ce = --6v it04705 it04706 it04708 [tr2] [tr1] [tr2] [tr1] --25 c 25 c ta=75 c cib -- v eb cib -- v eb 2 10 7 5 3 2 1.0 --1.0 5 23 57 7 2 10 7 5 3 2 1.0 1.0 5 23 57 7 f=1mhz it04709 it04710 f=1mhz [tr2] [tr1] f t -- i c it04707 v ce =6v 2 3 5 7 2 3 5 7 1000 100 22 357 23 57 100 10 1.0 2 3 5 7 2 3 5 7 1000 100 22 357 23 57 --100 --10 --1.0 i c -- v be 160 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 v ce =6v --25 c 25 c ta=75 c i c -- v be --160 --140 --120 --100 --80 --60 --40 --20 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.2 --1.0 --25 c v ce = --6v ta=75 c 25 c it04703 it04704 [tr2] [tr1] base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma dc current gain, h fe base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe emitter-to-base voltage, v eb -- v input capacitance, cib -- pf emitter-to-base voltage, v eb -- v input capacitance, cib -- pf
CPH6526 no.7453-4/5 v ce (sat) -- i c --1.0 --0.01 --1.0 --100 --10 23 57 23 57 23 --0.1 7 5 3 2 7 5 3 2 1.0 0.01 1.0 100 10 23 57 23 57 23 0.1 7 5 3 2 7 5 3 2 i c / i b =10 --25 c ta=75 c v be (sat) -- i c 3 2 3 --1.0 --100 --10 23 57 23 57 2 1.0 100 10 23 57 23 57 2 --1.0 7 5 3 2 3 1.0 7 5 i c / i b =10 ta= --25 c 25 c 75 c v ce (sat) -- i c v be (sat) -- i c i c / i b =10 ta= --25 c 75 c it04713 it04715 it04714 it04716 25 c 25 c i c / i b =10 --25 c ta=75 c 25 c [tr2] [tr1] [tr2] [tr1] cob -- v cb cob -- v cb 2 10 7 5 7 5 3 2 3 --1.0 23 57 23 57 57 --10 --100 1.0 2 10 7 5 7 3 5 3 2 5 1.0 23 57 23 57 57 10 100 1.0 f=1mhz it04711 it04712 f=1mhz [tr2] [tr1] collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v [tr1 / tr2] [tr1 / tr2] p c -- ta collector dissipation, p c -- mw it05368 ambient temperature, ta -- c 100 200 300 400 500 350 600 0 0 175 125 150 100 75 50 25 total dissipation 1unit 1.0 23 57 10 23 57 100 0.001 2 0.01 3 5 7 2 0.1 3 5 7 2 3 5 a s o collector-to -emitter voltage, v ce -- v collector current, i c -- a it05412 50 m s i cp =0.3a i c =0.15a 1ms 10ms 100ms single pulse ta=25 c dc operation 100 m s
CPH6526 no.7453-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2004. specifications and information herein are subject to change without notice. ps
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